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zmm1...zmm75 silicon epitaxial planar zener diodes in minimelf case especially for automatic insertion. the zener voltages are graded according to the international e24 standard. smaller voltage tolerances and higher zener voltages are upon request. these diodes are also available in do-35 case with the type designation bzx55c... absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 500 1) mw junction temperature t j 175 o c storage temperature range t stg - 55 to + 175 o c 1) valid provided that electrodes ar e kept at ambient temperature characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 0.3 1) k/mw forward voltage at i f = 100 ma v f 1 v 1) valid provided that electrodes ar e kept at ambient temperature ll-34 1/8
zmm1...zmm75 characteristics at t a = 25 o c zener voltage range 1) dynamic resistance reverse leakage current v znom v zt at l zt z zt z zk at i zk t a = 25 o ct a = 125 o c at v r temp. coefficient of zener voltage type (v) (v) (ma) max. ( ? )max. ( ? ) (ma) max. (a) max. (a) (v) tkvz (%/k) zmm1 2) 0.75 0.7...0.8 5 8 50 1 - - - -0.26...-0.23 zmm2v0 2 1.8...2.15 5 85 600 1 100 200 1 -0.09...-0.06 zmm2v2 2.2 2.08...2.33 5 85 600 1 75 160 1 -0.09...-0.06 zmm2v4 2.4 2.28...2.56 5 85 600 1 50 100 1 -0.09...-0.06 zmm2v7 2.7 2.5...2.9 5 85 600 1 10 50 1 -0.09...-0.06 zmm3v0 3 2.8...3.2 5 85 600 1 4 40 1 -0.08...-0.05 zmm3v3 3.3 3.1...3.5 5 85 600 1 2 40 1 -0.08...-0.05 zmm3v6 3.6 3.4...3.8 5 85 600 1 2 40 1 -0.08...-0.05 zmm3v9 3.9 3.7...4.1 5 85 600 1 2 40 1 -0.08...-0.05 ZMM4V3 4.3 4...4.6 5 75 600 1 1 20 1 -0.06...-0.03 zmm4v7 4.7 4.4...5 5 60 600 1 0.5 10 1 -0.05...+0.02 zmm5v1 5.1 4.8...5.4 5 35 550 1 0.1 2 1 -0.02...+0.02 zmm5v6 5.6 5.2...6 5 25 450 1 0.1 2 1 -0.05...+0.05 zmm6v2 6.2 5.8...6.6 5 10 200 1 0.1 2 2 0.03...0.06 zmm6v8 6.8 6.4...7.2 5 8 150 1 0.1 2 3 0.03...0.07 zmm7v5 7.5 7...7.9 5 7 50 1 0.1 2 5 0.03...0.07 zmm8v2 8.2 7.7...8.7 5 7 50 1 0.1 2 6.2 0.03...0.08 zmm9v1 9.1 8.5...9.6 5 10 50 1 0.1 2 6.8 0.03...0.09 zmm10 10 9.4...10.6 5 15 70 1 0.1 2 7.5 0.03...0.1 zmm11 11 10.4...11.6 5 20 70 1 0.1 2 8.2 0.03...0.11 zmm12 12 11.4...12.7 5 20 90 1 0.1 2 9.1 0.03...0.11 zmm13 13 12.4...14.1 5 26 110 1 0.1 2 10 0.03...0.11 zmm15 15 13.8...15.6 5 30 110 1 0.1 2 11 0.03...0.11 zmm16 16 15.3...17.1 5 40 170 1 0.1 2 12 0.03...0.11 zmm18 18 16.8...19.1 5 50 170 1 0.1 2 13 0.03...0.11 zmm20 20 18.8...21.2 5 55 220 1 0.1 2 15 0.03...0.11 zmm22 22 20.8...23.3 5 55 220 1 0.1 2 16 0.04...0.12 zmm24 24 22.8...25.6 5 80 220 1 0.1 2 18 0.04...0.12 zmm27 27 25.1...28.9 5 80 220 1 0.1 2 20 0.04...0.12 zmm30 30 28...32 5 80 220 1 0.1 2 22 0.04...0.12 zmm33 33 31...35 5 80 220 1 0.1 2 24 0.04...0.12 zmm36 36 34...38 5 80 220 1 0.1 2 27 0.04...0.12 zmm39 39 37...41 2.5 90 500 0.5 0.1 5 30 0.04...0.12 zmm43 43 40...46 2.5 90 500 0.5 0.1 5 33 0.04...0.12 zmm47 47 44...50 2.5 110 600 0.5 0.1 5 36 0.04...0.12 zmm51 51 48...54 2.5 125 700 0.5 0.1 10 39 0.04...0.12 zmm56 56 52...60 2.5 135 700 0.5 0.1 10 43 0.04...0.12 zmm62 62 58...66 2.5 150 1000 0.5 0.1 10 47 0.04...0.12 zmm68 68 64...72 2.5 200 1000 0.5 0.1 10 51 0.04...0.12 zmm75 75 70...79 2.5 250 1000 0.5 0.1 10 56 0.04...0.12 1) tested with pulses t p = 20 ms. 2) the zmm1 is a silicon diode with operation in forward direction. hence, the index of all param eters should be "f" instead of "z ". connect the cathode electrode to the negative pole. 2/8
3/8 0 0 10 20 vz 40 30 zmm 36 zmm 15 test current iz 5ma 10 20 iz zmm 12 breakdown characteristics t j = constant (pulsed) ma 30 0 01 zmm 10 24 3 zmm 27 zmm 18 zmm 22 zmm 33 57 6 vz tj=25 c zmm... o 810 9 zmm 3.3 zmm 3.9 test current iz 5ma 20 10 30 breakdown characteristics t j = constant (pulsed) iz 40 50 ma zmm 1 o tj=25 c zmm 2.7 zmm 8.2 zmm 5.6 zmm 4.7 zmm... v v zmm 6.8 zmm1...zmm75
4/8 zmm1...zmm75 forward characteristics ma i f v f 10 10 10 1 10 10 10 10 10 0 0.2 0.4 0.6 0.8 1 v 3 2 -1 -2 -3 -4 -5 tj=100 c o tj=25 c o admissible power dissipation versus ambient temperature valid provided that electrodes are kept at ambient temperature. zmm... zmm... 500 400 300 200 100 0 0100 200 c t amb p tot mw o zmm 51 test current iz 5ma 0 10 0 2 6 4 8 iz 20 30 40 50 60 vz 80 70 90 100 v zmm 43 breakdown characteristics t j = constant (pulsed) ma 10 tj=25 c o zmm 39 zmm 47 zmm...
5/8 1 t 1 zmm5.6 10 s 100v v r =2v 1 10 234 5 3 2 4 5 10 2 vz at iz=5 ma 5 43 v r =1v c tot zmm... pf 3 100 7 2 v r =2v 5 4 1000 7 v r =1v t j =25 c o capacitance versus zener voltage -5 10 10 -4 10 -3 10 -2 -1 t p 10 1 5 0.1 1 2 5 1 2 3 4 zmm6.2 6.8/8.2 10 iz 2 5 2 5 10 12 100ma dynamic resistance versus zener current r zj 10 2 4 3 5 100 0.1 2 5 1 o t j =25 c 18 15 27 22 33 zmm... 10 2 5 iz 2 5 100ma pulse thermal resistance versus pulse duration valid provided that the electrodes are kept at ambient temperature. k/w zmm... 4 0.1 7 3 2 4 5 0.05 0.01 0.02 10 3 2 v=0 t p t v= t p p i 0.5 0.2 10 7 5 2 2 5 4 3 10 7 3 zmm... 2 5 4 3 10 2 3 r zj 100 4 5 2 5 3 4 1000 5.1 4.7 3.6 2.7 zmm1 t j =25 c o dynamic resistance versus zener current r tha zmm1...zmm75
6/8 10 o 10 t j =25 c vz at iz=5 ma iz=5 ma 1 1 2 10 43 5 234 5 100v 1 -5 23 vz at iz=5 ma 5 4 10 3 24 5 100v zmm... 5 zmm36 t j =25 c 3 2 5 4 10 7 2 dynamic resistance versus zener voltage 100 r zj 5 4 3 7 10 0.1 32 5 4 2 3 5 4 1 iz 24 3 2 10 7 2 5 7 3 4 r zj temperature dependence of zener voltage versus zener voltage o 0 5 10 15 25 20 vz tj mv/k 20ma iz=1ma 5ma zmm... vz tj 43 10ma 39 1 1 24 3 5 negative 5 3 2 4 10 47+51 2 4 3 2 r zth 10 5 r zth =r tha .vz. 3 2 4 5 100v vz at iz=5 ma 10 24 3 5 positive zmm... dynamic resistance versus zener current 3 thermal differential resistance versus zener voltage valid provided that electrodes are kept at ambient temperature 3 zmm... zmm1...zmm75
7/8 5.1 0 60 at iz=5 ma -0.2 0 -0.1 20 40 x) c o t j 100 3.6 1 80 120 140 4.7 change of zener voltage versus junction temperature vz 0.3 0.1 0.2 0.4 0.6 0.5 0.8 0.7 v x) vz=35 v 5.6 6.2 5.9 8 7 25 15 10 zmm... 0 10 -0.4 1 2 -0.2 34 5 vz at iz=5 ma 23 5 4 100v 0.6 0.2 0.4 0.8 1.2 1 change of zener voltge from turn-on up to the point of thermal equilibrium versus zener voltage vz=r zth .iz iz=5 ma 1.6 1.4 v zmm... zmm... 40 40 0 0 20 20 vz tj 60 80 100 100v 60 vz at iz=5 ma 80 iz=5 ma vz temperature dependence of zener voltage versus zener voltage mv/k zmm... 3 0 -1 20 40 60 1 0 2 iz=5 ma 120 t j 10080 140 o c 6 4 5 7 8 9 36v 43v vz bei iz=5ma 51v change of zener voltage versus junction temperature v vz zmm1...zmm75
8/8 4 40 0 020 vz 1 2 3 100v 60 vz at iz=5 ma 80 iz=5 ma change of zener voltge from turn-on up to the point of thermal equilibrium versus zener voltage vz=r zth .iz v 5 zmm... iz=2 ma zmm1...zmm75

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